VL7103 SOLID STATE DEVICE MODELING AND SIMULATION
UNIT I MOSFET DEVICE PHYSICS
MOSFET capacitor, Basic operation, Basic modeling, Advanced MOSFET modeling, RF modeling of MOS transistors, Equivalent circuit representation of MOS transistor, Highfrequency behavior of MOS transistor and A.C small signal modeling, model parameter extraction, modeling parasitic BJT, Resistors, Capacitors, Inductors.
UNIT II DEVICE MODELLING
Prime importance of circuit and device simulations in VLSI; Nodal, mesh, modified nodal and hybrid analysis equations. Solution of network equations: Sparse matrix techniques, solution of nonlinear networks through Newton-Raphson technique, convergence and stability.
UNIT III MULTISTEP METHODS:
Solution of stiff systems of equations, adaptation of multistep methods to the solution of electrical networks, general purpose circuit simulators.
UNIT IV MATHEMATICAL TECHNIQUES FOR DEVICE SIMULATIONS:
Poisson equation, continuity equation, drift-diffusion equation, Schrodinger equation, hydrodynamic equations, trap rate, finite difference solutions to these equations in 1D and 2D space, grid generation.
UNIT V SIMULATION OF DEVICES
Computation of characteristics of simple devices like p-n junction, MOS capacitor and MOSFET; Small-signal analysis.
REFERENCES:
1. Arora, N., “MOSFET Models for VLSI Circuit Simulation”, Springer-Verlag, 1993
2. Selberherr, S., “Analysis and Simulation of Semiconductor Devices”, Springer-Verlag., 1984
3. Fjeldly, T., Yetterdal, T. and Shur, M., “Introduction to Device Modeling and Circuit Simulation”, Wiley-Interscience., 1997
4. Grasser, T., “Advanced Device Modeling and Simulation”, World Scientific Publishing Company., 2003
5. Chua, L.O. and Lin, P.M., “Computer-Aided Analysis of Electronic Circuits: Algorithms and Computational Techniques”, Prentice-Hall., 1975
6. Trond Ytterdal, Yuhua Cheng and Tor A. Fjeldly Wayne Wolf, “Device Modeling for Analog and RF CMOS Circuit Design”, John Wiley & Sons Ltd.
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